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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1400 DESCRIPTION *High Breakdown Voltage: VCBO= 1500V (Min) *High Switching Speed APPLICATIONS *Designed for color TV horizontal output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w scs .i w VALUE UNIT 1500 V 800 V 7 V 2.5 A 10 A 80 W .cn mi e IC Collector Current- Continuous ICP Collector Current-Pulse PC Collector Power Dissipation @ TC= 25 TJ Junction Temperature 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD1400 TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 5mA; IE= 0 1500 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 100mA; RBE= 800 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 200mA; IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.6A B 8.0 V VBE(sat) Base-Emitter Saturation Voltage ICBO Collector Cutoff Current IEBO Emitter Cutoff Current hFE DC Current Gain fT Current-Gain--Bandwidth Product tf Fall Time w w. w .cn mi cse is B IC= 2A; IB= 0.6A 1.5 V VCB= 800V; IE= 0 10 A VEB= 5V; IC= 0 1.0 mA IC= 0.5A; VCE= 5V 8 IC= 0.5A; VCE= 10V IC= 2A, IB1= 0.6A, IB2= -1.2A; RL= 100; VCC= 200V 3 MHz 0.7 s isc Websitewww.iscsemi.cn 2 |
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